Samsung is continuing its aggressive push toward next-generation NAND Flash scaling with the development of a new 900-layer V-NAND design built using advanced wafer bonding technology. …
… The drive leverages the PCIe 5.0 x4 interface alongside NVMe 2.0d, integrated DRAM cache architecture, and KIOXIA’s own BiCS FLASH TLC NAND technology to deliver sequential transfer rates up to 14,900 MB/s read and 13,700 MB/s write. …
… Source: MSI Share this content Twitter Facebook Reddit WhatsApp Email Print Samsung Develops 900-Layer V-NAND Through Advanced Hybrid Bonding Technology ZALMAN Launches ZM-STC11 Thermal Paste With 18 W/m·K Conductivity
… Share this content Twitter Facebook Reddit WhatsApp Email Print NVIDIA Vera CPU Benchmarks Surpass Xeon and EPYC in Early Testing Samsung Develops 900-Layer V-NAND Through Advanced Hybrid Bonding Technology