… Sanjay Mehrotra - Micron President & CEO Besides HBM4, the company also talked about the next-gen HBM4E memory. Unlike HBM, which is based completely on an in-house & advanced CMOS base die, Micron will partner with TSMC for manufacturing the base logic die for HBM4E memory. …
… The Rubin Ultra platform has 16 HBM4E sites, 8 per GPU chiplet, so that's 64 GB of 16-Hi capacities per stack. A reduction to 12-Hi will lead to 768 GB of HBM4E memory, a 25% reduction vs the original design, but a 2.66x capacity boost over the standard Rubin chips. …
… The new standards offer more than just speed improvements, with the highlights listed below: Related Story Micron Warns Memory Crunch Will Outlast 2026 as AI Demand Outpaces What HBM, DRAM and NAND Can Supply 10nm-class DRAM Process Tech 1c 4nm Logic Process 11.7-13.0 Gbps Pin speeds 3.3 TB/s Bandw… …
… TSMC 4NP TSMC 4NP TSMC 5nm TSMC 7nm TSMC 12nm TSMC 16nm CPU Rosa Vera Vera Grace Grace Grace N/A N/A N/A Memory HBM4e/HBM5? …
… It added that the next-generation HBM4E memory should start its production ramp in calendar year 2027 with the first sample using DRAM modules made on the 1-gamma production node. …
… From the production of the base die to memory stacking and packaging. …
… Samsung is planning to deliver some of the first samples of its HBM4e product shortly. …