Heritage - SK hynix Newsroom
…11 SK hynix Starts Full-Scale Mass Production of 16nm NAND 2013. 10 SK hynix Develops Industry-Leading 6Gb LPDDR3 2013. 06 SK hynix Develops the World’s First High Density 8Gb…
…11 SK hynix Starts Full-Scale Mass Production of 16nm NAND 2013. 10 SK hynix Develops Industry-Leading 6Gb LPDDR3 2013. 06 SK hynix Develops the World’s First High Density 8Gb…
…All SSDs will feature NAND and SCM, with NAND speeds being upped to 4800 MT/s. In addition to this, InnoGrit will also introduce its Cascade IG5676 controller, which is compliant with…
…That runs counter to earlier expectations that smartphone brands would scale back specs “to protect margins amid rising NAND Flash prices, potentially leading to a decline in average storage capacity in 2026…
…At current production rates, the DRAM and NAND makers are only able to meet 60-70% of the total demand, and with Gigawatt-scale datacenters coming online in the next few years…
…Even so, NAND flash has enormous economies of scale and billions invested in fab plants across the world. What IBM has done with Theseus is to incorporate a small amount of PCM…
…SIMO), a global leader in NAND flash controllers for solid-state storage devices, today announced the SM2524XT, a next-generation PCIe Gen 5 DRAMless SSD controller purpose-built for AI inference and…
…This includes LPDDR5X system memory, 3D NAND storage, and HBM4 used on the Rubin GPUs. The scale of the increase reflects both higher capacity and a more expensive memory market. A major…
…AI training clusters, cloud computing infrastructure, and enterprise data centers continue to consume increasing quantities of DRAM, NAND flash, and high-bandwidth memory. Suppliers throughout the industry have struggled to keep pace…
…The Tungsten Hexafluoride gas is essential for 3D NAND and HBM memory architectures. It fills the nano-scale vias that connect different layers of transistors in advanced chips (especially 7nm and below…
…Over the following 18 years, he devoted himself to NAND development, leading the development process across eight consecutive generations—from the second generation (32-layer) 3D NAND to the ninth generation (321…